TCAD study of single-event effects for the 4H-SiC VDMOSFET with step source

XIANG Jun, WANG Ying, YU Chenghao

Journal of Hangzhou Dianzi University ›› 2025, Vol. 45 ›› Issue (1) : 11-18.

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Journal of Hangzhou Dianzi University ›› 2025, Vol. 45 ›› Issue (1) : 11-18. DOI: 10.13954/j.cnki.hdu.2025.01.002

TCAD study of single-event effects for the 4H-SiC VDMOSFET with step source

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 45(1): 11-18 https://doi.org/10.13954/j.cnki.hdu.2025.01.002

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