A 6-cell Gallium Arsenide heterojunction bipolar transistor model based on parasitic structure

HU Ganlin, LIU Jun

Journal of Hangzhou Dianzi University ›› 2025, Vol. 45 ›› Issue (6) : 12-21.

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Journal of Hangzhou Dianzi University ›› 2025, Vol. 45 ›› Issue (6) : 12-21. DOI: 10.13954/j.cnki.hdu.2025.06.002

A 6-cell Gallium Arsenide heterojunction bipolar transistor model based on parasitic structure

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 45(6): 12-21 https://doi.org/10.13954/j.cnki.hdu.2025.06.002

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